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v02.0500
MICROWAVE CORPORATION
HMC283
GaAs MMIC MEDIUM POWER AMPLIFIER, 17 - 40 GHz
Features
High Gain: 21 dB Psat Output Power: +21 dBm Wideband Performance: 17 - 40 GHz Small Chip Size: 0.88 mm x 1.72 mm
1
AMPLIFIERS - CHIP
Typical Applications
The HMC283 MPA is ideal for: * Millimeterwave Point-to-Point Radios * VSAT * SATCOM
Functional Diagram
General Description
The HMC283 chip is a four stage GaAs MMIC Medium Power Amplifier (MPA) which covers the frequency range of 17 to 40 GHz. The chip can easily be integrated into Multi-Chip Modules (MCMs) due to its small (1.62 mm2) size. The chip utilizes a GaAs PHEMT process offering 20 dB gain and +21 dBm output power from a bias supply of +3.5V @ 300mA. The HMC283 may be used as a frequency doubler. A B.I.T. (Built-In-Test) pad (Vdet) allows monitoring microwave output power. All data is with the chip in a 50 ohm test fixture connected via 0.076mm x 0.0127mm (3mil x 0.5mil) ribbon bonds of minimal length 0.31mm (<12mils).
Electrical Specifications, TA = +25 C, Vdd= +3.5V*, ldd = 300 mA
Parameter Frequency Range Gain Gain Flatness (Any 1 GHz BW) Input Return Loss Output Return Loss Reverse Isolation Output Power for 1 dB Compression (P1dB) Saturated Output Power (Psat) Output Third Order Intercept (IP3) Noise Figure Supply Current (Idd)(Vdd = +3.5V, Vgg = -0.15V Typ.) 40 14 17 21 16 Min. Typ. 17 - 40 21 0.8 9 6 50 18 21 26 10 300 14 400 Max. Units GHz dB dB dB dB dB dBm dBm dBm dB mA
*Vdd = Vd1, 2, 3, 4 connected to +3.5V, adjusting Vgg = Vg1, 2, 3, 4 between -2.0 to +0.4V to achieve Idd = 300 mA typical.
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com
v02.0500
MICROWAVE CORPORATION
HMC283
GaAs MMIC MEDIUM POWER AMPLIFIER, 17 - 40 GHz
Broadband Gain & Return Loss GaAs MMIC SUB-HARMONICALLY Gain vs. Temperature PUMPED MIXER
30 25 20 30 28 26
-55 C
17 - 25 GHz
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AMPLIFIERS - CHIP
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RESPONSE (dB)
15
24
GAIN (dB)
10 5 0 -5 -10 -15 -20 -25 0 10 S11
S21
S22
22 20 18 16
+25 C
14 12 10 20 FREQUENCY (GHz) 30 40 10 15 20
+85 C
25
30
35
40
FREQUENCY (GHz)
Reverse Isolation vs. Temperature
0 -10
Input Return Loss vs. Temperature
0 -2 +85C
INPUT RETURN LOSS (dB)
-4 -6 -8 -10 -12 -14 -16 -18 -20 -55C
ISOLATION (dB)
-20 -30 -55 C -40 -50 -60 +25 C -70 10 15 20 25 30 35 40 FREQUENCY (GHz) +85 C
+25 C
10
15
20
25
30
35
40
FREQUENCY (GHz)
Noise Figure vs. Temperature
14 +85 C
Output Return Loss vs. Temperature
0 -2 -55 C +25 C
OUTPUT RETURN LOSS (dB)
12
-4 -6 -8 -10 -12 -14 -16 -18 -20
NOISE FIGURE (dB)
10 8 +25 C 6 -55 C 4 2 0 10 15 20 25 30 35 40 FREQUENCY (GHz)
+85 C
10
15
20
25
30
35
40
FREQUENCY (GHz)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com
v02.0500
MICROWAVE CORPORATION
HMC283
GaAs MMIC MEDIUM POWER AMPLIFIER, 17 - 40 GHz
1
AMPLIFIERS - CHIP
GaAs MMIC SUB-HARMONICALLY Power Compression @ 20 -GHz PUMPED MIXER 17 25 P1dB vs. Temperature
23 24
GHz
Pout (dBm), GAIN (dB), PAE (%)
22 21 -55 C
22 20 18 16 14 12 10 8 6 4 2 Pout
Gain
P1dB (dBm)
20 19 18 17 16 15 14 13 16 18 20 22 24 26 28 30 32 34 36 38 40 +25 C +85 C
PAE
0 -10
-8
-6
-4
-2
0
2
4
6
8
10
FREQUENCY (GHz)
INPUT POWER (dBm)
Psat vs. Temperature
25 24 23 22 -55 C
Power Compression @ 28 GHz
24
Pout (dBm), GAIN (dB), PAE (%)
22 20 18 16 14 12 10 8 6 4 2 Pout
Gain
Psat (dBm)
21 20 19 18 17 16 15 16 18 20 22 24 26 28 30 32 34 36 38 40 +85 C +25 C
PAE
0 -10
-8
-6
-4
-2
0
2
4
6
8
10
FREQUENCY (GHz)
INPUT POWER (dBm)
Output IP3 vs. Temperature
Frequency (GHz) Temperature -55 C +25 C +85 C All levels in dBm 20 25.6 27.5 27 28 25.4 25.9 24.4 38 28.6 27.1 25.7
Power Compression @ 39 GHz
24
Pout (dBm), GAIN (dB), PAE (%)
22 20 18 16 14 12 10 8 6 4 2 0 -10 -8 -6 -4 Pout
Gain
PAE
-2
0
2
4
6
8
10
INPUT POWER (dBm)
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com
MICROWAVE CORPORATION
v02.0500
HMC283
GaAs MMIC MEDIUM POWER AMPLIFIER, 17 - 40 GHz
Absolute Maximum Ratings
Drain Bias Voltage (Vdd1, Vdd2, Vdd3, Vdd4) Drain Bias Current (Idd) Gate Bias Voltage (Vgg1, Vgg2, Vgg3, Vgg4) Gate Bias Current (Igg) RF Input Power (RFin)(Vdd = +3.0 Vdc) Channel Temperature Continuous Pdiss (T = 85 C) (derate 13.04 mW/C above 85 C) Thermal Resistance (channel to die bottom) Storage Temperature Operating Temperature +5.0 Vdc 400 mA -2 to +0.4Vdc 4 mA +10 dBm 175 C 1.174 W
1
AMPLIFIERS - CHIP
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76.7 C/W -65 to +150 C -55 to +85 C
Outline Drawing
NOTES: 1. ALL DIMENSIONS ARE IN INCHES [MM] 2. DIE THICKNESS IS .004" 3. TYPICAL BOND IS .004" SQUARE 4. BACKSIDE METALLIZATION: GOLD 5. BOND PAD METALLIZATION: GOLD 6. BACKSIDE METAL IS GROUND. 7. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com
v02.0500
MICROWAVE CORPORATION
HMC283
GaAs MMIC MEDIUM POWER AMPLIFIER, 17 - 40 GHz
1
AMPLIFIERS - CHIP
Mounting & Bonding Techniques for Millimeterwave GaAs MMICs
The die should be attached directly to the ground plane eutectically or with conductive epoxy (see HMC general Handling, Mounting, Bonding Note.) 50 Ohm Microstrip transmission lines on 0.127 mm (5 mil) thick alumina thin film substrates are recommended for bringing RF to and from the chip (Figure 1). If 0.254 mm (10 mil) thick alumina thin film substrates must be used, the die should be raised 0.150 mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. One way to accomplish this is to attach the 0.102 mm (4 mil) thick die to a 0.150 mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (Figure 2). Microstrip substrates should be brought as close to the die as possible in order to minimize bond wire length. Figure 3: Typical HMC283 Assembly Typical die-to-substrate spacing is 0.076 mm (3 mils). Gold ribbon of 0.076 mm x 0.013 mm (3 mil x 0.5 mil) is recommended to minimize inductance on the RF ports. 0.025 mm (1 mil) diameter ball or wedge bonds are acceptable for DC bias connections. RF bypass capacitors should be used on the Vdd & Vgg inputs. 100 pF single layer capacitors (mounted eutectically or by conductive epoxy) placed no further than 0.762 mm (30 mils) from the chip are recommended. The photo in figure 3 shows a typical assembly for the HMC283 MMIC chip.
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com
v02.0500
MICROWAVE CORPORATION
HMC283
GaAs MMIC MEDIUM POWER AMPLIFIER, 17 - 40 GHz
HMC283 Alternate Applications: HMC283 Frequency Multiplier Performance
HMC283 can also perform as a frequency multiplier. This is accomplished by biasing Vg1 into its pinchoff region - typically -1V to -2V. By adjusting the Vg1 bias, the device will operate as a doubler or tripler. Vg2 may also be adjusted to minimize the levels of unwanted harmonics. The plot shows the performance of HMC283 operated as a doubler with Vg1 = -1V and the remaining gate voltages (Vg2, 3, 4) set to -0.15V. In this condition the amplifier draws 310mA at 3.5V drain bias (Vdd) and provides +5dB to -5dB conversion loss dependent upon the output frequency.
5 4 3 2 1 0 -1 -2 -3 -4 -5 -6 -7 -8 -9 -10 10 15 15 dBm
1
18 dBm
10 dBm
20
25
30
35
40
OUTPUT FREQUENCY (GHz)
HMC283 Voltage Detector, Built-In-Test (B.I.T.)
By connecting the Vdet port to a 10K Ohm resistor and monitoring the voltage, a B.I.T. circuit can be created to monitor changes in the device output power. This circuit is extremely well compensated for temperature variations as shown in the first plot. The detected voltage does change with frequency and the second plot shows its variation.
1.6
2 1.8
DETECTED VOLTAGE INTO 10K RESISTOR (Volts)
DETECTED VOLTAGE INTO 10K RESISTOR (Volts)
1.4 1.2 1 0.8 0.6 +85 C 0.4 0.2 0 10 12 14 16 18 OUTPUT POWER (dBm) -55 C +25 C 20 22
1.6 1.4 22 GHz 1.2 1 0.8 0.6 0.4 0.2 0 10 12 14 16 18 20 22 OUTPUT POWER (dBm) 38 GHz 28 GHz 18 GHz
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com
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AMPLIFIERS - CHIP
CONVERSION LOSS (dB)
MICROWAVE CORPORATION
v02.0500
HMC283
GaAs MMIC MEDIUM POWER AMPLIFIER, 17 - 40 GHz
1
AMPLIFIERS - CHIP
Handling Precautions
Follow these precautions to avoid permanent damage. Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning systems. Static Sensitivity: Follow ESD precautions to protect against > 250V ESD strikes. Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize inductive pick-up. General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers.
Mounting
The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy. The mounting surface should be clean and flat. Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 deg. C and a tool temperature of 265 deg. C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 deg. C. DO NOT expose the chip to a temperature greater than 320 deg. C for more than 20 seconds. No more than 3 seconds of scrubbing should be required for attachment. Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer's schedule.
Wire Bonding
Ball or wedge bond with 0.025 mm (1 mil) diameter pure gold wire (DC Bias) or ribbon bond (RF ports) 0.076 mm x 0.013 mm (3 mil x 0.5 mil) size is recommended. Thermosonic wirebonding with a nominal stage temperature of 150 deg. C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. Use the minimum level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on the chip and terminated on the package or substrate. All bonds should be as short as possible <0.31 mm (12 mils).
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com
MICROWAVE CORPORATION
v02.0500
HMC283
GaAs MMIC MEDIUM POWER AMPLIFIER, 17 - 40 GHz
Notes:
1
AMPLIFIERS - CHIP
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com
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